List of selected papers published by Dr. Rashmi Jha.
R.Jha, J.Choung, R.J.Nemanich and V.Misra, "A Systematic Approach of
Understanding and Retaining PMOS Compatible Work function of Metal Gate
Electrodes on HfO2 Gate Dielectrics", Materials Research Society, Spring Meeting
2006.
B. Chen, R. Jha, H. Lazar, N. Biswas, J. Lee B. Lee, L. Wielunski, E. Garfunkel,
V. Misra, "Influence of oxygen diffusion through capping layers of low work
function metal gate electrodes", IEEE, Electron Device Letters, Vol. 27, Issue
4, April 2006.
B.Chen, R.Jha, V.Misra, "Work Function Tuning Via Ultra Thin Charged Reaction
Layers Using AlTa and AlTaN Alloys", IEEE, Electron Device Letters, Vol. 27,
Issue 9, September 2006.
D. J. Lichtenwalner, J.S. Jur, R. Jha, N. Inoue, B. Chen, V. Misra, A.I. Kingon,
"High-temperature stability of lanthanum silicate gate dielectric MIS devices
with Ta and TaN electrodes", Journal of the Electrochemical Society, 153 (9),
F210-F214 2006.
Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra, J.C. Lee, "Effects of Gate
Electrodes and Barrier Heights on the Breakdown Characteristics and Weibull
Slopes of HfO2 MOS Devices", Proceedings of the IEEE International Reliability
Physics Symposium, 25-29, April 2004.
R. Jha, J. Gurganus, Y.H. Kim, R. Choi, J. Lee, V. Misra, "A Capacitance-Based
Methodology for Work Function Extraction of Metals on High-k", Electron Device
Letters, IEEE , Volume 25 , Issue 6, June 2004.
Y.H. Kim, R. Choi, R. Jha, J.H. Lee, V. Misra, J.C. Lee, "Effects of Barrier
Height (fB) and the Nature of Bi-Layer Structure on the Reliability of High-k
Dielectrics with Dual Metal Gate (Ru & Ru-Ta alloy) Technology", IEEE Symposium
on VLSI Technology, June 2004.
R. Jha, J.H. Lee, B. Chen, H.R. Lazar, J. Gurganus, N. Biswas, P. Majhi, G.
Brown, V. Misra, "Evaluation of Fermi Level Pinning in Low, Midgap and High
Workfunction Metal Gate Electrodes on ALD and MOCVD HfO2 under High Temperature
Exposure", Proceedings of the IEEE International Electron Devices Meeting, 2004.
R. Jha and V. Misra, "Optimized Methodology to Extract Work Function of Metal
Gates on High-K Dielectrics", Technical Report submitted to SRC/SEMATECH FEP
Transition Center Review, November 2004.
J.H. Lee, Y.S. Suh, H. Lazar, R. Jha, J. Gurganus, Y. Lin, V. Misra,
"Compatibility of Dual Metal Gate Electrodes with High-k Dielectrics for CMOS",
Proceedings of the IEEE International Electron Devices Meeting, 8-10 December
2003.
H.R. Lazar, R. Jha, Y.H. Kim, R. Choi, J. Lee, V.Misra, "Characterization of
Mobility with Candidate Metal Gate Electrodes on HfO2 ", 35th IEEE Semiconductor
Interface Specialists Conference, San Diego, CA, December 2004.
R. Jha, B. Lee, B. Chen, S.R. Novak, P. Majhi, V. Misra, "Dependence of PMOS
Metal Work Functions on Surface Conditions of High-K Gate Dielectrics",
Proceedings of IEEE International Electron Devices Meeting, 2005.
R. Jha, J.H.Lee, P. Majhi, V. Misra, "Investigation of Work Function Tuning
using Multiple Layer Metal Gate Electrodes Stacks for Complementary Metal Oxide
Semiconductor Applications", Applied Physics Letters, Vol 87, 223503, 2005.
