Rashmi Jha is an assistant professor in the department of Electrical Engineering and Computer Science. She has considerable experience in advanced Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOS FET) processing and characterization for the next-generation analog, digital, and memory applications. Prior to joining the University of Toledo, she worked as a process integration engineer for the 45nm and 32nm high-k/ metal gate based CMOS technology at IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY. She has published various papers and has several pending patents in the areas of advanced CMOS device fabrication and integration. She has been a recipient of prestigious IBM Invention Achievement Award in 2007, Materials Research Society�s Graduate Student Award in 2006, Applied Materials Fellowship Award in 2005-2006, and the best student paper award nomination in IEEE International Electron Devices Meeting (IEDM) in 2005.
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Areas of Expertise:
Fabrication, integration, and characterization of advanced CMOS devices, CMOS process development and manufacturing, thin films deposition and characterization, metal gates, high permittivity transition metal oxides (high-k), nanostructure based devices, metal/high-k/semiconductor interface, metal/semiconductor contacts, surface potential and work function characterization, surface and band engineering of semiconductor
Research Interests:
Nanoscale CMOS fabrication, integration, and characterization beyond 22nm node, new computational state variables, semiconductor interface and band engineering, nanostructures based third generation photovoltaic devices, nano-sensors.
Research Groups:
Research Lab: Nanoelectronic Materials and Devices Laboratory
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- Ph.D. Electrical Engineering, North Carolina State University, 2006
- M.S. Electrical Engineering, North Carolina State University, 2003
- B.Tech. Indian Institute Of Technology, Kharagpur, India, 2000
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